TY - JOUR
T1 - High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)
AU - Zhang, Meng
AU - Banerjee, Animesh
AU - Bhattacharya, Pallab
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work was supported by a grant from KAUST.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
PY - 2011/5
Y1 - 2011/5
N2 - InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.
AB - InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.
UR - http://hdl.handle.net/10754/598477
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024810011991
UR - http://www.scopus.com/inward/record.url?scp=79957978780&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.12.038
DO - 10.1016/j.jcrysgro.2010.12.038
M3 - Article
SN - 0022-0248
VL - 323
SP - 470
EP - 472
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -