High-Performance Vertical Gate-All-Around Silicon Nanowire FET With High-kappa/Metal Gate

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Metal Gate 100%
• Si Nanowires 100%
• Field Effect Transistors 100%
• Nanowires 100%
• Gate Stack 50%
• Low-Temperature 50%
• Potential Application 50%
• Process Flow 50%
• Gate Length 50%
• Subthreshold Slope 50%
• Cross Point 50%
• Logic Circuit 50%
• Dielectrics 50%
• Selection Transistor 50%
• Point Memory 50%
• Atomic Layer Deposition 50%

Material Science

• Nanowires 100%
• Field Effect Transistors 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Dielectric Material 33%
• Transistor 33%
• Reactive Ion Etching 33%
• Logic Gate 33%

Keyphrases

• High-κ 100%
• Low Temperature Characteristics 33%
• Low-power Logic 33%
• Cross-point Memory 33%