TY - JOUR
T1 - High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c
AU - Lin, Yenhung
AU - Faber, Hendrik
AU - Zhao, Kui
AU - Wang, Qingxiao
AU - Amassian, Aram
AU - McLachlan, Martyn A.
AU - Anthopoulos, Thomas D.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Y. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.
PY - 2013/6/25
Y1 - 2013/6/25
N2 - An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
AB - An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
UR - http://hdl.handle.net/10754/562822
UR - http://doi.wiley.com/10.1002/adma.201301622
UR - http://www.scopus.com/inward/record.url?scp=84882456867&partnerID=8YFLogxK
U2 - 10.1002/adma.201301622
DO - 10.1002/adma.201301622
M3 - Article
SN - 0935-9648
VL - 25
SP - 4340
EP - 4346
JO - Advanced Materials
JF - Advanced Materials
IS - 31
ER -