TY - GEN
T1 - High Power GaN-based Blue Superluminescent Diode Exceeding 450 mW
AU - Alatawi, Abdullah
AU - Holguin Lerma, Jorge Alberto
AU - Shen, Chao
AU - Shakfa, Mohammad Khaled
AU - Alhamoud, Abdullah A.
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008; King Abdullah University of Science and Technology (KAUST) BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01.
PY - 2018/12/13
Y1 - 2018/12/13
N2 - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.
AB - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.
UR - http://hdl.handle.net/10754/628876
UR - https://ieee-islc.org/wp-content/uploads/2018/08/ISLC-2018-FULL-CONFERENCE-PROGRAM.pdf
UR - http://www.scopus.com/inward/record.url?scp=85057428276&partnerID=8YFLogxK
U2 - 10.1109/ISLC.2018.8516200
DO - 10.1109/ISLC.2018.8516200
M3 - Conference contribution
SN - 978-1-5386-4081-4
SP - 129
EP - 130
BT - 2018 IEEE International Semiconductor Laser Conference (ISLC)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -