High-rate electron cyclotron resonance etching of GaAs via holes

Y. W. Chen; B. S. Ooi; G. I. Ng; C. L. Tan

doi:10.1016/S0921-5107(99)00576-0

High-rate electron cyclotron resonance etching of GaAs via holes

Y. W. Chen, B. S. Ooi, G. I. Ng, C. L. Tan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report a high-rate etching of GaAs via holes using Cl₂/Ar plasma generated by an electron cyclotron resonance system. Ni, with a thickness of 200 nm, was used as the etch mask. The effects of the chuck temperature, process pressure, r.f. power, gas flow rate, and microwave power on the etch rate and the resultant etch profiles were investigated. The GaAs etch rate was found to increase as the process pressure, Cl₂ flow rate, and the r.f. power or the microwave power increased. An etch rate as high as 6.7 μm min^-1 was observed from a sample etched using a microwave power, r.f. power and process pressure of 800 W, 150 W and 50 mTorr, respectively. An etch profile, suitable for monolithic microwave integrated circuits via hole applications, has been achieved using the process developed.

Original language	English (US)
Pages (from-to)	282-285
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	74
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(99)00576-0
State	Published - May 1 2000
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(99)00576-0

Cite this

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abstract = "We report a high-rate etching of GaAs via holes using Cl2/Ar plasma generated by an electron cyclotron resonance system. Ni, with a thickness of 200 nm, was used as the etch mask. The effects of the chuck temperature, process pressure, r.f. power, gas flow rate, and microwave power on the etch rate and the resultant etch profiles were investigated. The GaAs etch rate was found to increase as the process pressure, Cl2 flow rate, and the r.f. power or the microwave power increased. An etch rate as high as 6.7 μm min-1 was observed from a sample etched using a microwave power, r.f. power and process pressure of 800 W, 150 W and 50 mTorr, respectively. An etch profile, suitable for monolithic microwave integrated circuits via hole applications, has been achieved using the process developed.",

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T1 - High-rate electron cyclotron resonance etching of GaAs via holes

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Tan, C. L.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - We report a high-rate etching of GaAs via holes using Cl2/Ar plasma generated by an electron cyclotron resonance system. Ni, with a thickness of 200 nm, was used as the etch mask. The effects of the chuck temperature, process pressure, r.f. power, gas flow rate, and microwave power on the etch rate and the resultant etch profiles were investigated. The GaAs etch rate was found to increase as the process pressure, Cl2 flow rate, and the r.f. power or the microwave power increased. An etch rate as high as 6.7 μm min-1 was observed from a sample etched using a microwave power, r.f. power and process pressure of 800 W, 150 W and 50 mTorr, respectively. An etch profile, suitable for monolithic microwave integrated circuits via hole applications, has been achieved using the process developed.

AB - We report a high-rate etching of GaAs via holes using Cl2/Ar plasma generated by an electron cyclotron resonance system. Ni, with a thickness of 200 nm, was used as the etch mask. The effects of the chuck temperature, process pressure, r.f. power, gas flow rate, and microwave power on the etch rate and the resultant etch profiles were investigated. The GaAs etch rate was found to increase as the process pressure, Cl2 flow rate, and the r.f. power or the microwave power increased. An etch rate as high as 6.7 μm min-1 was observed from a sample etched using a microwave power, r.f. power and process pressure of 800 W, 150 W and 50 mTorr, respectively. An etch profile, suitable for monolithic microwave integrated circuits via hole applications, has been achieved using the process developed.

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U2 - 10.1016/S0921-5107(99)00576-0

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

ER -

High-rate electron cyclotron resonance etching of GaAs via holes

Abstract

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