High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Suey Li Toh; K. Li; C. H. Ang; E. Er; S. Redkar; K. P. Loh; C. B. Boothroyd; L. Chan

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Suey Li Toh^*, K. Li, C. H. Ang, E. Er, S. Redkar, K. P. Loh, C. B. Boothroyd, L. Chan

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

Original language	English (US)
Pages	143-146
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan, Province of China Duration: Jul 5 2004 → Jul 8 2004

Other

Other	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan, Province of China
Period	07/5/04 → 07/8/04

ASJC Scopus subject areas

General Engineering

Cite this

Toh, S. L., Li, K., Ang, C. H., Er, E., Redkar, S., Loh, K. P., Boothroyd, C. B., & Chan, L. (2004). High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. 143-146. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, Province of China.

@conference{cebc4098358e45218987259f71368a74,

title = "High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED",

abstract = "Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.",

author = "Toh, {Suey Li} and K. Li and Ang, {C. H.} and E. Er and S. Redkar and Loh, {K. P.} and Boothroyd, {C. B.} and L. Chan",

year = "2004",

language = "English (US)",

pages = "143--146",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Toh, SL, Li, K, Ang, CH, Er, E, Redkar, S, Loh, KP, Boothroyd, CB & Chan, L 2004, 'High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED', Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, Province of China, 07/5/04 - 07/8/04 pp. 143-146.

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED. / Toh, Suey Li; Li, K.; Ang, C. H. et al.
2004. 143-146 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, Province of China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

AU - Toh, Suey Li

AU - Li, K.

AU - Ang, C. H.

AU - Er, E.

AU - Redkar, S.

AU - Loh, K. P.

AU - Boothroyd, C. B.

AU - Chan, L.

PY - 2004

Y1 - 2004

N2 - Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

AB - Mechanical stress due to trench isolation and contact etch-stop-layers (ESLs) has been reported to show a marked influence on the electron and hole mobility of nanoscaled MOSFETs. Conventional tools such as micro-Raman spectroscopy and X-ray diffraction for measuring strain are limited in resolution. By using convergent beam electron diffraction (CBED) with nanometer spatial resolution, we have evaluated the mechanical stress induced in deep sub-micron devices by different etch-stop-layers (ESLs) and have demonstrated that the stress along the channel region can be engineered through the implementation of different ESLs.

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M3 - Paper

AN - SCOPUS:14844303512

SP - 143

EP - 146

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Abstract

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ASJC Scopus subject areas

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