High spatial resolution strain measurement of deep sub-micron semiconductor devices using CBED

Engineering

• Semiconductor Device 100%
• Mechanical Stress 100%
• Convergent Beam Electron Diffraction 100%
• Strain 100%
• Spatial Resolution 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Nanometre 50%
• Ray Diffraction 50%
• Channel Region 50%

Material Science

• Semiconductor Device 100%
• Mechanical Stress 100%
• Convergent Beam Electron Diffraction 100%
• Strain Measurement 100%
• Micro-Raman Spectroscopy 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• X-Ray Diffraction 50%
• Electron Mobility 50%
• Hole Mobility 50%

Keyphrases

• Trench Isolation 50%