High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Mritunjay Kumar; Vishal Khandelwal; Saravanan Yuvaraja; Dhanu Chettri; Haicheng Cao; Ganesh Mainali; Xiao Tang; Xiaohang Li

doi:10.35848/1347-4065/ad8714

High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Mritunjay Kumar^*, Vishal Khandelwal, Saravanan Yuvaraja, Dhanu Chettri, Haicheng Cao, Ganesh Mainali, Xiao Tang, Xiaohang Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this work, we report the reduced gate leakage current by using aluminum oxide (Al₂O₃) and gallium oxide (Ga₂O₃) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450 °C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al₂O₃-based GaN MOS-HEMT at 450 °C. The low gate leakage current is attributed to the reduced oxygen vacancies present in the Ga₂O₃ layer, which effectively impede the conduction path of the Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.

Original language	English (US)
Article number	100905
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	63
Issue number	10
DOIs	https://doi.org/10.35848/1347-4065/ad8714
State	Published - Oct 1 2024

Keywords

gallium nitride
gate leakage current
gate stack
high electron mobility transistors
high temperature

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.35848/1347-4065/ad8714

Cite this

Kumar, M., Khandelwal, V., Yuvaraja, S., Chettri, D., Cao, H., Mainali, G., Tang, X., & Li, X. (2024). High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 63(10), Article 100905. https://doi.org/10.35848/1347-4065/ad8714

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title = "High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage",

abstract = "In this work, we report the reduced gate leakage current by using aluminum oxide (Al2O3) and gallium oxide (Ga2O3) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450 °C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al2O3-based GaN MOS-HEMT at 450 °C. The low gate leakage current is attributed to the reduced oxygen vacancies present in the Ga2O3 layer, which effectively impede the conduction path of the Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.",

keywords = "gallium nitride, gate leakage current, gate stack, high electron mobility transistors, high temperature",

author = "Mritunjay Kumar and Vishal Khandelwal and Saravanan Yuvaraja and Dhanu Chettri and Haicheng Cao and Ganesh Mainali and Xiao Tang and Xiaohang Li",

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Kumar, M, Khandelwal, V, Yuvaraja, S, Chettri, D, Cao, H, Mainali, G, Tang, X & Li, X 2024, 'High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 63, no. 10, 100905. https://doi.org/10.35848/1347-4065/ad8714

High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage. / Kumar, Mritunjay; Khandelwal, Vishal; Yuvaraja, Saravanan et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 63, No. 10, 100905, 01.10.2024.

Research output: Contribution to journal › Article › peer-review

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T1 - High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

AU - Kumar, Mritunjay

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AU - Yuvaraja, Saravanan

AU - Chettri, Dhanu

AU - Cao, Haicheng

AU - Mainali, Ganesh

AU - Tang, Xiao

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AB - In this work, we report the reduced gate leakage current by using aluminum oxide (Al2O3) and gallium oxide (Ga2O3) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450 °C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al2O3-based GaN MOS-HEMT at 450 °C. The low gate leakage current is attributed to the reduced oxygen vacancies present in the Ga2O3 layer, which effectively impede the conduction path of the Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.

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