High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

Takayuki Sugiyama, Hiroshi Amano, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.
Original languageEnglish (US)
Title of host publicationJapanese Journal of Applied Physics
DOIs
StatePublished - Jan 1 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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