We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.
|Original language||English (US)|
|Title of host publication||Japanese Journal of Applied Physics|
|State||Published - Jan 1 2011|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)