Abstract
We demonstrated the high-temperature operation of normally off-mode heterostructure field-effect transistors (HFETs) with a p-GaN gate. The HFETs with a p-GaN gate were operated in the normally off mode at 350 °C. The temperature dependence of their performance was compared with the results of simulation. © 2011 The Japan Society of Applied Physics.
Original language | English (US) |
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Title of host publication | Japanese Journal of Applied Physics |
DOIs | |
State | Published - Jan 1 2011 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)