High temperature performance of flexible SOI FinFETs with sub-20 nm fins

Amer El Hajj Diab, Galo T. Sevilla, Mohamed T. Ghoneim, Muhammad Mustafa Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We demonstrate a flexible version of the semiconductor industry's most advanced transistor topology - FinFET on silicon-on-insulator (SOI) with sub-20 nm fins and high-κ/metal gate stacks. This is the most advanced flexible (0.5 mm bending radius) transistor on SOI ever demonstrated for exciting opportunities in high performance flexible electronics with stylish product design. For the first time, we characterize such device from room to high temperature (150 °C). And we discuss the dependence of the I-V curves with temperature.
Original languageEnglish (US)
Title of host publication2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781479974382
StatePublished - Oct 2014


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