High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

Chen Shang, Eamonn Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert Herrick, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.
Original languageEnglish (US)
Title of host publication2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580910
StatePublished - May 1 2021
Externally publishedYes

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