High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

Chen Shang; Eamonn Hughes; Yating Wan; Mario Dumont; Rosalyn Koscica; Jennifer Selvidge; Robert Herrick; Arthur C. Gossard; Kunal Mukherjee; John E. Bowers

High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

Chen Shang, Eamonn Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert Herrick, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.

Original language	English (US)
Title of host publication	Optics InfoBase Conference Papers
Publisher	Optica Publishing Group (formerly OSA)
State	Published - Jan 1 2021
Externally published	Yes

Cite this

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title = "High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance",

abstract = "We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.",

author = "Chen Shang and Eamonn Hughes and Yating Wan and Mario Dumont and Rosalyn Koscica and Jennifer Selvidge and Robert Herrick and Gossard, {Arthur C.} and Kunal Mukherjee and Bowers, {John E.}",

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T1 - High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

AU - Shang, Chen

AU - Hughes, Eamonn

AU - Wan, Yating

AU - Dumont, Mario

AU - Koscica, Rosalyn

AU - Selvidge, Jennifer

AU - Herrick, Robert

AU - Gossard, Arthur C.

AU - Mukherjee, Kunal

AU - Bowers, John E.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2021/1/1

Y1 - 2021/1/1

N2 - We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.

AB - We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.

UR - http://www.scopus.com/inward/record.url?scp=85120069982&partnerID=8YFLogxK

M3 - Conference contribution

BT - Optics InfoBase Conference Papers

PB - Optica Publishing Group (formerly OSA)

ER -

High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

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