High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

Chen Shang; Eamonn Hughes; Yating Wan; Mario Dumont; Rosalyn Koscica; Jennifer Selvidge; Robert Herrick; Arthur C. Gossard; Kunal Mukherjee; John E. Bowers

doi:10.1364/OPTICA.423360

High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

Chen Shang, Eamonn Hughes, Yating Wan, Mario Dumont, Rosalyn Koscica, Jennifer Selvidge, Robert Herrick, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ∼1x106 cm-2 and efficiently removing misfit dislocations above and below the active region, 1.3 μmInAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.

Original language	English (US)
Pages (from-to)	749-754
Number of pages	6
Journal	Optica
Volume	8
Issue number	5
DOIs	https://doi.org/10.1364/OPTICA.423360
State	Published - May 1 2021
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/OPTICA.423360

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title = "High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters",

abstract = "Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ∼1x106 cm-2 and efficiently removing misfit dislocations above and below the active region, 1.3 μmInAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.",

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T1 - High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

AU - Shang, Chen

AU - Hughes, Eamonn

AU - Wan, Yating

AU - Dumont, Mario

AU - Koscica, Rosalyn

AU - Selvidge, Jennifer

AU - Herrick, Robert

AU - Gossard, Arthur C.

AU - Mukherjee, Kunal

AU - Bowers, John E.

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Y1 - 2021/5/1

N2 - Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ∼1x106 cm-2 and efficiently removing misfit dislocations above and below the active region, 1.3 μmInAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.

AB - Direct epitaxial growth of III-V light sources on Si photonic chips is promising to realize low-cost and high-functionality photonic integrated circuits. Historically, high temperature reliability of such devices has been the major roadblock due to crystalline defects from heteroepitaxy. Here, by reducing the threading dislocation densities to ∼1x106 cm-2 and efficiently removing misfit dislocations above and below the active region, 1.3 μmInAs quantum-dot lasers directly grown on industry standard on-axis Si (001) show record-breaking reliability at 80°C. The hero device shows minimum degradation after more than 1200 h of constant current stress. Statistical analysis shows an extrapolated lifetime of over 22 years for the median devices, bringing these devices one big step closer to real world applications.

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High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters

Abstract

ASJC Scopus subject areas

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