High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

Y. K. Zheng*, Y. H. Wu, K. B. Li, J. J. Qiu, G. C. Han, L. H. An, P. Luo, Zaibing Guo

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Scopus citations


    Magnetic random access memory (MRAM) with a synthetic ferrimagnetic (SF) pinned layer has been investigated experimentally and theoretically. The SF pinned layer offers the higher thermal stability due to its even higher anisotropy and larger total thickness. A smaller aspect ratio cell with single domain state, less switching field dependence on the cell size, and lower switching field can be achieved in the SF structure than that in the conventional structure because of the thinner effective thickness. The experimental results show that high heat tolerance can also be achieved in the SF MRAM structure.

    Original languageEnglish (US)
    Pages (from-to)2634-2636
    Number of pages3
    JournalIEEE Transactions on Magnetics
    Issue number4 II
    StatePublished - Jul 1 2004


    • Giant magnetoresistance (GMR) effect
    • Magnetic random access memory (MRAM)
    • Spin-valve
    • Synthetic ferrimagnetic (SF) layer

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


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