High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

Y. K. Zheng; Y. H. Wu; K. B. Li; J. J. Qiu; G. C. Han; L. H. An; P. Luo; Z. B. Guo

doi:10.1109/TMAG.2004.830199

High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

Y. K. Zheng^*, Y. H. Wu, K. B. Li, J. J. Qiu, G. C. Han, L. H. An, P. Luo, Z. B. Guo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Magnetic random access memory (MRAM) with a synthetic ferrimagnetic (SF) pinned layer has been investigated experimentally and theoretically. The SF pinned layer offers the higher thermal stability due to its even higher anisotropy and larger total thickness. A smaller aspect ratio cell with single domain state, less switching field dependence on the cell size, and lower switching field can be achieved in the SF structure than that in the conventional structure because of the thinner effective thickness. The experimental results show that high heat tolerance can also be achieved in the SF MRAM structure.

Original language	English (US)
Pages (from-to)	2634-2636
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	40
Issue number	4 II
DOIs	https://doi.org/10.1109/TMAG.2004.830199
State	Published - Jul 2004
Externally published	Yes

Keywords

Giant magnetoresistance (GMR) effect
Magnetic random access memory (MRAM)
Spin-valve
Synthetic ferrimagnetic (SF) layer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2004.830199

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title = "High thermal stable MRAM with a synthetic ferrimagnetic pinned layer",

abstract = "Magnetic random access memory (MRAM) with a synthetic ferrimagnetic (SF) pinned layer has been investigated experimentally and theoretically. The SF pinned layer offers the higher thermal stability due to its even higher anisotropy and larger total thickness. A smaller aspect ratio cell with single domain state, less switching field dependence on the cell size, and lower switching field can be achieved in the SF structure than that in the conventional structure because of the thinner effective thickness. The experimental results show that high heat tolerance can also be achieved in the SF MRAM structure.",

keywords = "Giant magnetoresistance (GMR) effect, Magnetic random access memory (MRAM), Spin-valve, Synthetic ferrimagnetic (SF) layer",

author = "Zheng, {Y. K.} and Wu, {Y. H.} and Li, {K. B.} and Qiu, {J. J.} and Han, {G. C.} and An, {L. H.} and P. Luo and Guo, {Z. B.}",

year = "2004",

month = jul,

doi = "10.1109/TMAG.2004.830199",

language = "English (US)",

volume = "40",

pages = "2634--2636",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4 II",

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TY - JOUR

T1 - High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

AU - Zheng, Y. K.

AU - Wu, Y. H.

AU - Li, K. B.

AU - Qiu, J. J.

AU - Han, G. C.

AU - An, L. H.

AU - Luo, P.

AU - Guo, Z. B.

PY - 2004/7

Y1 - 2004/7

N2 - Magnetic random access memory (MRAM) with a synthetic ferrimagnetic (SF) pinned layer has been investigated experimentally and theoretically. The SF pinned layer offers the higher thermal stability due to its even higher anisotropy and larger total thickness. A smaller aspect ratio cell with single domain state, less switching field dependence on the cell size, and lower switching field can be achieved in the SF structure than that in the conventional structure because of the thinner effective thickness. The experimental results show that high heat tolerance can also be achieved in the SF MRAM structure.

AB - Magnetic random access memory (MRAM) with a synthetic ferrimagnetic (SF) pinned layer has been investigated experimentally and theoretically. The SF pinned layer offers the higher thermal stability due to its even higher anisotropy and larger total thickness. A smaller aspect ratio cell with single domain state, less switching field dependence on the cell size, and lower switching field can be achieved in the SF structure than that in the conventional structure because of the thinner effective thickness. The experimental results show that high heat tolerance can also be achieved in the SF MRAM structure.

KW - Giant magnetoresistance (GMR) effect

KW - Magnetic random access memory (MRAM)

KW - Spin-valve

KW - Synthetic ferrimagnetic (SF) layer

UR - http://www.scopus.com/inward/record.url?scp=4444319437&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2004.830199

DO - 10.1109/TMAG.2004.830199

M3 - Article

AN - SCOPUS:4444319437

SN - 0018-9464

VL - 40

SP - 2634

EP - 2636

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 4 II

ER -

High thermal stable MRAM with a synthetic ferrimagnetic pinned layer

Abstract

Keywords

ASJC Scopus subject areas

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