High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Alfredo Mameli; James D. Parish; Tamer Dogan; Gerwin Gelinck; Michael W. Snook; Andrew J. Straiton; Andrew L. Johnson; Auke J. Kronemeijer

doi:10.1002/admi.202101278

High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Alfredo Mameli, James D. Parish, Tamer Dogan, Gerwin Gelinck, Michael W. Snook, Andrew J. Straiton, Andrew L. Johnson, Auke J. Kronemeijer

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Original language	English (US)
Pages (from-to)	2101278
Journal	Advanced Materials Interfaces
DOIs	https://doi.org/10.1002/admi.202101278
State	Published - Feb 3 2022
Externally published	Yes

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.202101278

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@article{a07035259cd94c21bb652cb1abe3f529,

title = "High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)",

author = "Alfredo Mameli and Parish, {James D.} and Tamer Dogan and Gerwin Gelinck and Snook, {Michael W.} and Straiton, {Andrew J.} and Johnson, {Andrew L.} and Kronemeijer, {Auke J.}",

note = "KAUST Repository Item: Exported on 2022-02-09 Acknowledged KAUST grant number(s): OSR-CRG2018-3783 Acknowledgements: he authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2022",

month = feb,

day = "3",

doi = "10.1002/admi.202101278",

language = "English (US)",

pages = "2101278",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "Wiley",

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TY - JOUR

T1 - High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

AU - Mameli, Alfredo

AU - Parish, James D.

AU - Dogan, Tamer

AU - Gelinck, Gerwin

AU - Snook, Michael W.

AU - Straiton, Andrew J.

AU - Johnson, Andrew L.

AU - Kronemeijer, Auke J.

N1 - KAUST Repository Item: Exported on 2022-02-09 Acknowledged KAUST grant number(s): OSR-CRG2018-3783 Acknowledgements: he authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2022/2/3

Y1 - 2022/2/3

UR - http://hdl.handle.net/10754/675460

UR - https://onlinelibrary.wiley.com/doi/10.1002/admi.202101278

U2 - 10.1002/admi.202101278

DO - 10.1002/admi.202101278

M3 - Article

SN - 2196-7350

SP - 2101278

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

ER -

High-Throughput Atomic Layer Deposition of P-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

ASJC Scopus subject areas

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