High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

Wen Yuan Chang; Hsin Wei Huang; Wei Ting Wang; Cheng Hao Hou; Yu Lun Chueh; Jr Hau He

doi:10.1149/2.092203jes

High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

Wen Yuan Chang^*, Hsin Wei Huang, Wei Ting Wang, Cheng Hao Hou, Yu Lun Chueh, Jr Hau He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO _x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

Original language	English (US)
Pages (from-to)	G29-G32
Journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume	159
Issue number	3
DOIs	https://doi.org/10.1149/2.092203jes
State	Published - 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.092203jes

Cite this

@article{15002dea1eca49268bfeca2834521014,

title = "High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device",

abstract = "This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.",

author = "Chang, {Wen Yuan} and Huang, {Hsin Wei} and Wang, {Wei Ting} and Hou, {Cheng Hao} and Chueh, {Yu Lun} and He, {Jr Hau}",

year = "2012",

doi = "10.1149/2.092203jes",

language = "English (US)",

volume = "159",

pages = "G29--G32",

journal = "JOURNAL OF THE ELECTROCHEMICAL SOCIETY",

issn = "0013-4651",

publisher = "Electrochemical Society",

number = "3",

}

TY - JOUR

T1 - High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

AU - Chang, Wen Yuan

AU - Huang, Hsin Wei

AU - Wang, Wei Ting

AU - Hou, Cheng Hao

AU - Chueh, Yu Lun

AU - He, Jr Hau

PY - 2012

Y1 - 2012

N2 - This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

AB - This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The CrZnOPt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrO x at the CrZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

UR - http://www.scopus.com/inward/record.url?scp=84863115846&partnerID=8YFLogxK

U2 - 10.1149/2.092203jes

DO - 10.1149/2.092203jes

M3 - Article

AN - SCOPUS:84863115846

SN - 0013-4651

VL - 159

SP - G29-G32

JO - JOURNAL OF THE ELECTROCHEMICAL SOCIETY

JF - JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IS - 3

ER -

High uniformity of resistive switching characteristics in a Cr/ZnO/Pt device

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this