@inproceedings{957ac5f8967f43d9aac0e0c2aa189d9a,
title = "Highly manufacturaba 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration",
abstract = "This paper reports the first demonstration of dual high-k and dual metal gate (DHDMG) CMOSFETs meeting the device targets of 45nm low stand-by power (LSTP) node. This novel scheme has several advantages over the previously reported dual metal gate integration, enabling the high-k and metal gate processes to be optimized separately for N and PMOSFETs in order to maximize performance gain and process controllability. The proposed gate stack integration results in a symmetric short channel Vt of ∼±0.45V with >80% high field mobility for both N and PMOSFETs and significantly lower gate leakage compared to poly/SiON stack.",
author = "Song, {S. C.} and Zhang, {Z. B.} and Hussain, {M. M.} and C. Huffman and J. Barnett and Bae, {S. H.} and Li, {H. J.} and P. Majhi and Park, {C. S.} and Ju, {B. S.} and Park, {H. K.} and Kang, {C. Y.} and R. Choi and P. Zeitzoff and Tseng, {H. H.} and Lee, {B. H.} and R. Jammy",
year = "2006",
language = "English (US)",
isbn = "1424400058",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "13--14",
booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",
note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",
}