TY - JOUR
T1 - Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage
AU - Nugraha, Mohamad I.
AU - Kim, Hyunho
AU - Sun, Bin
AU - Desai, Saheena
AU - de Arquer, F. Pelayo Garcia
AU - Sargent, Edward H.
AU - Alshareef, Husam N.
AU - Baran, Derya
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG2018-3737
Acknowledgements: The authors would like to acknowledge Xinwei Guan for supporting XRD measurement. Figures 1a and 6a were created by Heno Hwang, a scientific illustrator at King Abdullah University of Science and Technology (KAUST). This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG2018-3737.
PY - 2019/6/26
Y1 - 2019/6/26
N2 - Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (
AB - Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n- and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m−1 K−2, superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (
UR - http://hdl.handle.net/10754/656057
UR - http://doi.wiley.com/10.1002/aenm.201901244
UR - http://www.scopus.com/inward/record.url?scp=85068110492&partnerID=8YFLogxK
U2 - 10.1002/aenm.201901244
DO - 10.1002/aenm.201901244
M3 - Article
SN - 1614-6832
VL - 9
SP - 1901244
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 28
ER -