Highly stable thin film transistors using multilayer channel structure

Pradipta K. Nayak, Zhenwei Wang, Dalaver H. Anjum, Mohamed N. Hedhili, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.
Original languageEnglish (US)
Pages (from-to)103505
JournalApplied Physics Letters
Issue number10
StatePublished - Mar 9 2015


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