Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer

Chuanju Wang; Yi Lu; Che Hao Liao; Shibin Chandroth; Saravanan Yuvaraja; Xiaohang Li

doi:10.35848/1347-4065/ac6a32

Highly suppressed interface traps of Al₂O₃/GaN through interposing a stoichiometric Ga₂O₃layer

Chuanju Wang, Yi Lu, Che Hao Liao, Shibin Chandroth, Saravanan Yuvaraja, Xiaohang Li^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

Original language	English (US)
Article number	060906
Journal	Japanese Journal of Applied Physics
Volume	61
Issue number	6
DOIs	https://doi.org/10.35848/1347-4065/ac6a32
State	Published - Jun 1 2022

Keywords

GaN HEMTs
interfacial state density
stoichiometric Ga2O3 interlayer

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.35848/1347-4065/ac6a32

Cite this

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title = "Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer",

abstract = "Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.",

keywords = "GaN HEMTs, interfacial state density, stoichiometric Ga2O3 interlayer",

author = "Chuanju Wang and Yi Lu and Liao, {Che Hao} and Shibin Chandroth and Saravanan Yuvaraja and Xiaohang Li",

note = "Publisher Copyright: {\textcopyright} 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2022",

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doi = "10.35848/1347-4065/ac6a32",

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T1 - Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3layer

AU - Wang, Chuanju

AU - Lu, Yi

AU - Liao, Che Hao

AU - Chandroth, Shibin

AU - Yuvaraja, Saravanan

AU - Li, Xiaohang

PY - 2022/6/1

Y1 - 2022/6/1

N2 - Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

AB - Al2O3 is a broadly employed dielectric material in GaN high electron mobility transistors. Nevertheless, at the Al2O3/GaN interface, numerous traps induced by nonidealities of the native GaO x layer on the surface of GaN can lead to threshold voltage instability and other reliability issues. In this study, after removing the native GaO x layer, a stoichiometric Ga2O3 layer was sandwiched between Al2O3 and GaN. The interfacial state density of Al2O3/GaN can be reduced by more than two orders of magnitude to an extremely low level of 2.4 × 1010 eV-1 cm-2 at the energy level of 0.36 eV.

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