Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

Davide Priante, Bilal Janjua, Aditya Prabaswara, Ram Chandra Subedi, Rami T. Elafandy, Sergei Lopatin, Dalaver H. Anjum, Chao Zhao, Tien Khee Ng, Boon S. Ooi

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30 Scopus citations


In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.
Original languageEnglish (US)
Pages (from-to)4214
JournalOptical Materials Express
Issue number12
StatePublished - Nov 2 2017


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