TY - JOUR
T1 - Hole compensation effect in III-Mn-V dilute ferromagnetic semiconductors
AU - Xu, Chi
AU - Wang, Mao
AU - Yuan, Ye
AU - Larkin, Gerard
AU - Helm, Manfred
AU - Zhou, Shengqiang
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Support by the Ion Beam Center (IBC) at HZDR is gratefully
acknowledged. The authors thank Professor B L Gallagher,
Dr K W Edmonds, Dr R P Campion and Dr A W Rushforth
(University of Nottingham) for providing (Ga,Mn)As samples. The support from Rafal Jakiela (Polish Academy of Sciences) for SIMS measurement is acknowledged. This work
is funded by the Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713). The author C Xu thanks
financial support by Chinese Scholarship Council (File No.
201506680062)
PY - 2019/7/2
Y1 - 2019/7/2
N2 - A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is represented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.
AB - A systematic study of hole compensation effect on magnetic properties, which is controlled by defect compensation through ion irradiation, in (Ga,Mn)As, (In,Mn)As and (Ga,Mn)P is represented in this work. In all materials, both Curie temperature and magnetization decrease upon increasing the hole compensation, confirming the description of hole mediated ferromagnetism according to the p-d Zener model. The material dependence of Curie temperature and magnetization versus hole compensation reveals that the manipulation of magnetic properties in III-Mn-V dilute ferromagnetic semiconductors by ion irradiation is strongly influenced by the energy level location of the produced defect relative to the band edges in semiconductors.
UR - http://hdl.handle.net/10754/660095
UR - https://iopscience.iop.org/article/10.1088/1361-6463/ab25dd
UR - http://www.scopus.com/inward/record.url?scp=85073700557&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/ab25dd
DO - 10.1088/1361-6463/ab25dd
M3 - Article
SN - 0022-3727
VL - 52
SP - 355301
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 35
ER -