Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

Y. F. Li; H. L. Pan; B. Yao; R. Deng; Y. Xu; J. C. Li; L. G. Zhang; H. F. Zhao; D. Z. Shen; T. Wu

doi:10.1088/0022-3727/45/7/075002

Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

Y. F. Li^*, H. L. Pan, B. Yao, R. Deng, Y. Xu, J. C. Li, L. G. Zhang, H. F. Zhao, D. Z. Shen, T. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn _1xCu _xO _1yS _y) alloy thin films with high hole concentration. The Zn _0.91Cu _0.09O _0.92S _0.08 alloy thin films with a hole concentration of 4.3×10 ¹⁹cm ³ show the strongest magnetization of 1.5 _B/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn _1xCu _xO _1yS _y system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn _1xCu _xO _1yS _y alloy with high hole concentration is promising to find applications in spintronic devices.

Original language	English (US)
Article number	075002
Journal	Journal of Physics D: Applied Physics
Volume	45
Issue number	7
DOIs	https://doi.org/10.1088/0022-3727/45/7/075002
State	Published - Feb 22 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/45/7/075002

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title = "Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films",

abstract = "We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn 1xCu xO 1yS y) alloy thin films with high hole concentration. The Zn 0.91Cu 0.09O 0.92S 0.08 alloy thin films with a hole concentration of 4.3×10 19cm 3 show the strongest magnetization of 1.5 B/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn 1xCu xO 1yS y system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn 1xCu xO 1yS y alloy with high hole concentration is promising to find applications in spintronic devices.",

author = "Li, {Y. F.} and Pan, {H. L.} and B. Yao and R. Deng and Y. Xu and Li, {J. C.} and Zhang, {L. G.} and Zhao, {H. F.} and Shen, {D. Z.} and T. Wu",

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doi = "10.1088/0022-3727/45/7/075002",

language = "English (US)",

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TY - JOUR

T1 - Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

AU - Li, Y. F.

AU - Pan, H. L.

AU - Yao, B.

AU - Deng, R.

AU - Xu, Y.

AU - Li, J. C.

AU - Zhang, L. G.

AU - Zhao, H. F.

AU - Shen, D. Z.

AU - Wu, T.

PY - 2012/2/22

Y1 - 2012/2/22

N2 - We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn 1xCu xO 1yS y) alloy thin films with high hole concentration. The Zn 0.91Cu 0.09O 0.92S 0.08 alloy thin films with a hole concentration of 4.3×10 19cm 3 show the strongest magnetization of 1.5 B/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn 1xCu xO 1yS y system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn 1xCu xO 1yS y alloy with high hole concentration is promising to find applications in spintronic devices.

AB - We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn 1xCu xO 1yS y) alloy thin films with high hole concentration. The Zn 0.91Cu 0.09O 0.92S 0.08 alloy thin films with a hole concentration of 4.3×10 19cm 3 show the strongest magnetization of 1.5 B/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn 1xCu xO 1yS y system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn 1xCu xO 1yS y alloy with high hole concentration is promising to find applications in spintronic devices.

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U2 - 10.1088/0022-3727/45/7/075002

DO - 10.1088/0022-3727/45/7/075002

M3 - Article

AN - SCOPUS:84863164536

SN - 0022-3727

VL - 45

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 7

M1 - 075002

ER -

Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

Abstract

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