Hole selective MoOx contact for silicon heterojunction solar cells

Corsin Battaglia; Silvia Martin De Nicolas; Stefaan De Wolf; Xingtian Yin; Maxwell Zheng; Christophe Ballif; Ali Javey

doi:10.1109/PVSC.2014.6925074

Hole selective MoO_x contact for silicon heterojunction solar cells

Corsin Battaglia, Silvia Martin De Nicolas, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

Efficient carrier selective contacts and excellent surface passivation are essential for solar cells to reach high power conversion efficiencies. Exploring MoO_x as a dopant-free, hole-selective contact in combination with an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the crystalline silicon absorber, we demonstrate a silicon hetero-junction solar cell with a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Compared to the traditional p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction solar cell, we observe a substantial gain in photocurrent of 1.9 mA/cm² for MoO_x due to its wide band gap of 3.3 eV. Our results on MoO_x have important implications for other combinations of transition metal oxides and photovoltaic absorber materials.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	968-970
Number of pages	3
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925074
State	Published - Oct 15 2014
Externally published	Yes
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	06/8/14 → 06/13/14

Keywords

heterojunction solar cells
high workfunction
molybdenum trioxide
passivation
photovoltaics
selective contact
silicon
x-ray photoelectron spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2014.6925074

Cite this

Battaglia, C., De Nicolas, S. M., De Wolf, S., Yin, X., Zheng, M., Ballif, C., & Javey, A. (2014). Hole selective MoO_x contact for silicon heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 968-970). Article 6925074 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925074

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title = "Hole selective MoOx contact for silicon heterojunction solar cells",

abstract = "Efficient carrier selective contacts and excellent surface passivation are essential for solar cells to reach high power conversion efficiencies. Exploring MoOx as a dopant-free, hole-selective contact in combination with an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the crystalline silicon absorber, we demonstrate a silicon hetero-junction solar cell with a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Compared to the traditional p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction solar cell, we observe a substantial gain in photocurrent of 1.9 mA/cm2 for MoOx due to its wide band gap of 3.3 eV. Our results on MoOx have important implications for other combinations of transition metal oxides and photovoltaic absorber materials.",

keywords = "heterojunction solar cells, high workfunction, molybdenum trioxide, passivation, photovoltaics, selective contact, silicon, x-ray photoelectron spectroscopy",

author = "Corsin Battaglia and {De Nicolas}, {Silvia Martin} and {De Wolf}, Stefaan and Xingtian Yin and Maxwell Zheng and Christophe Ballif and Ali Javey",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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doi = "10.1109/PVSC.2014.6925074",

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series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

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Battaglia, C, De Nicolas, SM, De Wolf, S, Yin, X, Zheng, M, Ballif, C & Javey, A 2014, Hole selective MoO_x contact for silicon heterojunction solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925074, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 968-970, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 06/8/14. https://doi.org/10.1109/PVSC.2014.6925074

Hole selective MoO_x contact for silicon heterojunction solar cells. / Battaglia, Corsin; De Nicolas, Silvia Martin; De Wolf, Stefaan et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 968-970 6925074 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Battaglia, Corsin

AU - De Nicolas, Silvia Martin

AU - De Wolf, Stefaan

AU - Yin, Xingtian

AU - Zheng, Maxwell

AU - Ballif, Christophe

AU - Javey, Ali

PY - 2014/10/15

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N2 - Efficient carrier selective contacts and excellent surface passivation are essential for solar cells to reach high power conversion efficiencies. Exploring MoOx as a dopant-free, hole-selective contact in combination with an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the crystalline silicon absorber, we demonstrate a silicon hetero-junction solar cell with a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Compared to the traditional p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction solar cell, we observe a substantial gain in photocurrent of 1.9 mA/cm2 for MoOx due to its wide band gap of 3.3 eV. Our results on MoOx have important implications for other combinations of transition metal oxides and photovoltaic absorber materials.

AB - Efficient carrier selective contacts and excellent surface passivation are essential for solar cells to reach high power conversion efficiencies. Exploring MoOx as a dopant-free, hole-selective contact in combination with an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the crystalline silicon absorber, we demonstrate a silicon hetero-junction solar cell with a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Compared to the traditional p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction solar cell, we observe a substantial gain in photocurrent of 1.9 mA/cm2 for MoOx due to its wide band gap of 3.3 eV. Our results on MoOx have important implications for other combinations of transition metal oxides and photovoltaic absorber materials.

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KW - x-ray photoelectron spectroscopy

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ER -

Battaglia C, De Nicolas SM, De Wolf S, Yin X, Zheng M, Ballif C et al. Hole selective MoO_x contact for silicon heterojunction solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 968-970. 6925074. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925074