Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Pichaya Pattanasattayavong; Nir Yaacobi-Gross; Kui Zhao; Guy Olivier Ngongang Ndjawa; Jinhua Li; Feng Yan; Brian C. O'Regan; Aram Amassian; Thomas D. Anthopoulos

doi:10.1002/adma.201202758

Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Pichaya Pattanasattayavong, Nir Yaacobi-Gross, Kui Zhao, Guy Olivier Ngongang Ndjawa, Jinhua Li, Feng Yan, Brian C. O'Regan, Aram Amassian, Thomas D. Anthopoulos

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201 Scopus citations

Abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	1504-1509
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	10
DOIs	https://doi.org/10.1002/adma.201202758
State	Published - Dec 27 2012

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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Pattanasattayavong, P., Yaacobi-Gross, N., Zhao, K., Ngongang Ndjawa, G. O., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D. (2012). Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature. Advanced Materials, 25(10), 1504-1509. https://doi.org/10.1002/adma.201202758

@article{2ef9e49609624f12b80cfcd269991f4f,

title = "Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature",

abstract = "The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Pichaya Pattanasattayavong and Nir Yaacobi-Gross and Kui Zhao and {Ngongang Ndjawa}, {Guy Olivier} and Jinhua Li and Feng Yan and O'Regan, {Brian C.} and Aram Amassian and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: P.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.",

year = "2012",

month = dec,

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doi = "10.1002/adma.201202758",

language = "English (US)",

volume = "25",

pages = "1504--1509",

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Pattanasattayavong, P, Yaacobi-Gross, N, Zhao, K, Ngongang Ndjawa, GO, Li, J, Yan, F, O'Regan, BC, Amassian, A & Anthopoulos, TD 2012, 'Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature', Advanced Materials, vol. 25, no. 10, pp. 1504-1509. https://doi.org/10.1002/adma.201202758

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T1 - Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

AU - Pattanasattayavong, Pichaya

AU - Yaacobi-Gross, Nir

AU - Zhao, Kui

AU - Ngongang Ndjawa, Guy Olivier

AU - Li, Jinhua

AU - Yan, Feng

AU - O'Regan, Brian C.

AU - Amassian, Aram

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: P.P. and T. D. A. are grateful to Cambridge Display Technology (CDT), the Anandamahidol Foundation, Thailand, Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/J001473/1 and European Research Council (ERC) AMPRO project no. 280221 for financial support.

PY - 2012/12/27

Y1 - 2012/12/27

N2 - The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm2 V-1 s-1. By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

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