Abstract
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.
Original language | English (US) |
---|---|
Pages (from-to) | 253507 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 25 |
DOIs | |
State | Published - Jun 23 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)