Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

Chadwin D. Young; Ji Woon Yang; Kenneth Matthews; Sagar Suthram; Muhammad Mustafa Hussain; Gennadi Bersuker; Casey Smith; Rusty Harris; Rino Choi; Byoung Hun Lee; Hsing Huang Tseng

doi:10.1116/1.3072919

Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

Chadwin D. Young, Ji Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, Hsing Huang Tseng

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.

Original language	English (US)
Pages (from-to)	468-471
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3072919
State	Published - 2009

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.3072919

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Young, C. D., Yang, J. W., Matthews, K., Suthram, S., Hussain, M. M., Bersuker, G., Smith, C., Harris, R., Choi, R., Lee, B. H., & Tseng, H. H. (2009). Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 468-471. https://doi.org/10.1116/1.3072919

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title = "Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations",

abstract = "Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.",

author = "Young, {Chadwin D.} and Yang, {Ji Woon} and Kenneth Matthews and Sagar Suthram and Hussain, {Muhammad Mustafa} and Gennadi Bersuker and Casey Smith and Rusty Harris and Rino Choi and Lee, {Byoung Hun} and Tseng, {Hsing Huang}",

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doi = "10.1116/1.3072919",

language = "English (US)",

volume = "27",

pages = "468--471",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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Young, CD, Yang, JW, Matthews, K, Suthram, S, Hussain, MM, Bersuker, G, Smith, C, Harris, R, Choi, R, Lee, BH & Tseng, HH 2009, 'Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 468-471. https://doi.org/10.1116/1.3072919

TY - JOUR

T1 - Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

AU - Young, Chadwin D.

AU - Yang, Ji Woon

AU - Matthews, Kenneth

AU - Suthram, Sagar

AU - Hussain, Muhammad Mustafa

AU - Bersuker, Gennadi

AU - Smith, Casey

AU - Harris, Rusty

AU - Choi, Rino

AU - Lee, Byoung Hun

AU - Tseng, Hsing Huang

PY - 2009

Y1 - 2009

N2 - Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.

AB - Hot carrier injection (HCI) degradation is evaluated for n -metal oxide semiconductor (MOS) and pMOS high- κ -fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the Vg = Vd condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.

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U2 - 10.1116/1.3072919

DO - 10.1116/1.3072919

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AN - SCOPUS:59949100260

SN - 1071-1023

VL - 27

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

Abstract

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