TY - JOUR
T1 - HVDC shunt tap based on three single-phase half-bridge series-connected MMCs operated under 2L modulation
AU - Elserougi, Ahmed
AU - Massoud, Ahmed
AU - Ahmed, Shehab
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication was made possible by NPRP grant NPRP(9-092-2-045) from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.
PY - 2019/6/19
Y1 - 2019/6/19
N2 - In this study, a cost-effective HVDC shunt tap with low-number of relatively low-voltage semiconductor devices and small-sized passive components is proposed. The proposed architecture is based on employing three single-phase half-bridge Modular Multilevel Converters (MMCs), where the DC sides of MMCs are connected in series across the total DC-link voltage. The MMCs are adopted instead of conventional Two-Level Voltage Source Converters (2L-VSCs) to avoid the complications of series connection of Insulated Gate Bipolar Transistors (IGBTs). The involved MMCs in the suggested architecture are operated with the conventional 2L modulation, which results in insignificant arm inductors and Sub-Modules (SMs) capacitances (in range of µH and µF, respectively). This, in turn, affects positively the converter cost and footprint. Each arm of the involved MMCs can be considered as a high-voltage valve of a 2L-VSC. To maintain the balance of SMs capacitors, each arm of the involved (N + 1)-level MMC has an extra SM (a balancing SM) to select N out of N + 1 SMs during the turn-off condition. The operational concept, design, and assessment of the proposed architecture are presented in this study. Simulation results are provided for substantiation of the proposed concept. Finally, a scaled down single-phase prototype is used for experimental validation.
AB - In this study, a cost-effective HVDC shunt tap with low-number of relatively low-voltage semiconductor devices and small-sized passive components is proposed. The proposed architecture is based on employing three single-phase half-bridge Modular Multilevel Converters (MMCs), where the DC sides of MMCs are connected in series across the total DC-link voltage. The MMCs are adopted instead of conventional Two-Level Voltage Source Converters (2L-VSCs) to avoid the complications of series connection of Insulated Gate Bipolar Transistors (IGBTs). The involved MMCs in the suggested architecture are operated with the conventional 2L modulation, which results in insignificant arm inductors and Sub-Modules (SMs) capacitances (in range of µH and µF, respectively). This, in turn, affects positively the converter cost and footprint. Each arm of the involved MMCs can be considered as a high-voltage valve of a 2L-VSC. To maintain the balance of SMs capacitors, each arm of the involved (N + 1)-level MMC has an extra SM (a balancing SM) to select N out of N + 1 SMs during the turn-off condition. The operational concept, design, and assessment of the proposed architecture are presented in this study. Simulation results are provided for substantiation of the proposed concept. Finally, a scaled down single-phase prototype is used for experimental validation.
UR - http://hdl.handle.net/10754/656657
UR - http://mr.crossref.org/iPage?doi=10.1049%2Fiet-gtd.2018.6424
UR - http://www.scopus.com/inward/record.url?scp=85070873484&partnerID=8YFLogxK
U2 - 10.1049/iet-gtd.2018.6424
DO - 10.1049/iet-gtd.2018.6424
M3 - Article
SN - 1751-8687
VL - 13
SP - 3601
EP - 3611
JO - IET Generation, Transmission & Distribution
JF - IET Generation, Transmission & Distribution
IS - 16
ER -