Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfer

A hybrid inorganic/organic semiconductor structure employing a polyfluorene thin films with Efficient non-radiative Förster resonant energy transfer (FRET) was fabricated. FRET is mediated by dipole-dipole interactions, the magnitude of which critically depend on the spectral overlap between donor emission and acceptor absorption. It was observed that by adjusting the separation between the inorganic and organic layers, the strength of the FRET can be determined. An intensity enhancement of at least 20 times over the case of purely radiative transfer was achieved for a structure that promotes strong Förster transfer.