Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

Stefan P. Schießl; Hendrik Faber; Yen-Hung Lin; Stephan Rossbauer; Qingxiao Wang; Kui Zhao; Aram Amassian; Jana Zaumseil; Thomas D. Anthopoulos

doi:10.1002/adma.201503200

Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

Stefan P. Schießl, Hendrik Faber, Yen-Hung Lin, Stephan Rossbauer, Qingxiao Wang, Kui Zhao, Aram Amassian, Jana Zaumseil, Thomas D. Anthopoulos

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

Original language	English (US)
Pages (from-to)	3952-3959
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	20
DOIs	https://doi.org/10.1002/adma.201503200
State	Published - Oct 5 2015

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10.1002/adma.201503200

https://repository.kaust.edu.sa/bitstream/10754/594322/1/Schiebl%20et_al-2015_Advanced_Materials%202015_ASAP.pdf

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@article{12703ba499dd44aca8fe5e8674149f09,

title = "Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants",

abstract = "An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.",

author = "Schie{\ss}l, {Stefan P.} and Hendrik Faber and Yen-Hung Lin and Stephan Rossbauer and Qingxiao Wang and Kui Zhao and Aram Amassian and Jana Zaumseil and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: European Research Council (ERC) AMPRO[280221]",

year = "2015",

month = oct,

day = "5",

doi = "10.1002/adma.201503200",

language = "English (US)",

volume = "28",

pages = "3952--3959",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley",

number = "20",

}

TY - JOUR

T1 - Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

AU - Schießl, Stefan P.

AU - Faber, Hendrik

AU - Lin, Yen-Hung

AU - Rossbauer, Stephan

AU - Wang, Qingxiao

AU - Zhao, Kui

AU - Amassian, Aram

AU - Zaumseil, Jana

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: European Research Council (ERC) AMPRO[280221]

PY - 2015/10/5

Y1 - 2015/10/5

N2 - An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

AB - An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

UR - http://hdl.handle.net/10754/594322

UR - http://spiral.imperial.ac.uk/bitstream/10044/1/26727/2/Schiebl%20et_al-2015_Advanced_Materials%202015_ASAP.pdf

UR - http://www.scopus.com/inward/record.url?scp=84969245616&partnerID=8YFLogxK

U2 - 10.1002/adma.201503200

DO - 10.1002/adma.201503200

M3 - Article

C2 - 26437002

SN - 0935-9648

VL - 28

SP - 3952

EP - 3959

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

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