Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Erin C. Young, Benjamin P. Yonkee, Feng Wu, Sang Ho Oh, Steven P. DenBaars, Shuji Nakamura, James S. Speck

Research output: Contribution to journalArticlepeer-review

108 Scopus citations


In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.
Original languageEnglish (US)
Pages (from-to)022102
JournalApplied Physics Express
Issue number2
StatePublished - Jan 26 2016
Externally publishedYes


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