Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang; Xin He; Xixiang Zhang; Husam N. Alshareef

doi:10.1002/adma.201602157

Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef

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65 Scopus citations

Abstract

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

Original language	English (US)
Pages (from-to)	9133-9141
Number of pages	9
Journal	Advanced Materials
Volume	28
Issue number	41
DOIs	https://doi.org/10.1002/adma.201602157
State	Published - Aug 30 2016

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10.1002/adma.201602157

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title = "Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2",

abstract = "A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.",

author = "Zhenwei Wang and Xin He and Xixiang Zhang and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Z.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).",

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doi = "10.1002/adma.201602157",

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volume = "28",

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TY - JOUR

T1 - Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

AU - Wang, Zhenwei

AU - He, Xin

AU - Zhang, Xixiang

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Z.W. and X.H. contributed equally to this work. H.N.A. and X.X.Z. designed the work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).

PY - 2016/8/30

Y1 - 2016/8/30

N2 - A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

AB - A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.

UR - http://hdl.handle.net/10754/622895

UR - http://onlinelibrary.wiley.com/doi/10.1002/adma.201602157/full

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DO - 10.1002/adma.201602157

M3 - Article

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SN - 0935-9648

VL - 28

SP - 9133

EP - 9141

JO - Advanced Materials

JF - Advanced Materials

IS - 41

ER -

Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

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