Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport

Hyuk Jun Noh; Sein Chung; Mahmut Sait Okyay; Yoon Kwang Im; Seong Wook Kim; Do Hyung Kweon; Jong Pil Jeon; Jeong Min Seo; Na Hyun Kim; Soo Young Yu; Youjin Reo; Yong Young Noh; Boseok Kang; Noejung Park; Javeed Mahmood; Kilwon Cho; Jong Beom Baek

doi:10.1016/j.chempr.2022.08.001

Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport

Hyuk Jun Noh, Sein Chung, Mahmut Sait Okyay, Yoon Kwang Im, Seong Wook Kim, Do Hyung Kweon, Jong Pil Jeon, Jeong Min Seo, Na Hyun Kim, Soo Young Yu, Youjin Reo, Yong Young Noh, Boseok Kang, Noejung Park, Javeed Mahmood^*, Kilwon Cho^*, Jong Beom Baek^*

^*Corresponding author for this work

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices.

Original language	English (US)
Pages (from-to)	3130-3144
Number of pages	15
Journal	Chem
Volume	8
Issue number	11
DOIs	https://doi.org/10.1016/j.chempr.2022.08.001
State	Published - Nov 10 2022

Keywords

charge carrier mobility
fused aromatic network
Hall effect
SDG9: Industry, innovation, and infrastructure
semiconducting
two-dimensional

ASJC Scopus subject areas

General Chemistry
Biochemistry
Environmental Chemistry
General Chemical Engineering
Biochemistry, medical
Materials Chemistry

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10.1016/j.chempr.2022.08.001

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Noh, H. J., Chung, S., Okyay, M. S., Im, Y. K., Kim, S. W., Kweon, D. H., Jeon, J. P., Seo, J. M., Kim, N. H., Yu, S. Y., Reo, Y., Noh, Y. Y., Kang, B., Park, N., Mahmood, J., Cho, K., & Baek, J. B. (2022). Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport. Chem, 8(11), 3130-3144. https://doi.org/10.1016/j.chempr.2022.08.001

@article{dc9e5c75cd3849d2af0555b623a3034e,

title = "Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport",

abstract = "Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices.",

keywords = "charge carrier mobility, fused aromatic network, Hall effect, SDG9: Industry, innovation, and infrastructure, semiconducting, two-dimensional",

author = "Noh, {Hyuk Jun} and Sein Chung and Okyay, {Mahmut Sait} and Im, {Yoon Kwang} and Kim, {Seong Wook} and Kweon, {Do Hyung} and Jeon, {Jong Pil} and Seo, {Jeong Min} and Kim, {Na Hyun} and Yu, {Soo Young} and Youjin Reo and Noh, {Yong Young} and Boseok Kang and Noejung Park and Javeed Mahmood and Kilwon Cho and Baek, {Jong Beom}",

note = "Funding Information: This research was supported by the Creative Research Initiative ( CRI , 2014R1A3A2069102 ), Science Research Center ( SRC , 2016R1A5A1009405 ), and Young Researcher ( 2019R1C1C1006650 ) programs, 2020R1A2C3004477 and 2019R1A2C2089332 , through the National Research Foundation (NRF) of Korea and the U-K brand project ( 1.200096.01 ) of UNIST . Publisher Copyright: {\textcopyright} 2022 Elsevier Inc.",

year = "2022",

month = nov,

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doi = "10.1016/j.chempr.2022.08.001",

language = "English (US)",

volume = "8",

pages = "3130--3144",

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T1 - Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport

AU - Noh, Hyuk Jun

AU - Chung, Sein

AU - Okyay, Mahmut Sait

AU - Im, Yoon Kwang

AU - Kim, Seong Wook

AU - Kweon, Do Hyung

AU - Jeon, Jong Pil

AU - Seo, Jeong Min

AU - Kim, Na Hyun

AU - Yu, Soo Young

AU - Reo, Youjin

AU - Noh, Yong Young

AU - Kang, Boseok

AU - Park, Noejung

AU - Mahmood, Javeed

AU - Cho, Kilwon

AU - Baek, Jong Beom

N1 - Funding Information: This research was supported by the Creative Research Initiative ( CRI , 2014R1A3A2069102 ), Science Research Center ( SRC , 2016R1A5A1009405 ), and Young Researcher ( 2019R1C1C1006650 ) programs, 2020R1A2C3004477 and 2019R1A2C2089332 , through the National Research Foundation (NRF) of Korea and the U-K brand project ( 1.200096.01 ) of UNIST . Publisher Copyright: © 2022 Elsevier Inc.

PY - 2022/11/10

Y1 - 2022/11/10

N2 - Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices.

AB - Since the advent of graphene, the development of crystalline two-dimensional (2D) organic materials with semiconducting features has been extensively explored for their potential optoelectronic applications. Despite extensive progress in this field, it is still challenging to realize laterally extended organic materials with high electrical transport properties. Here, we report a 2D ladder-type fused aromatic network (FAN) in which backbones are composed of hydrophenazine (HP) linkage (designated HP-FAN). Consequently, its 2D extended delocalization of π-molecular orbitals imparts a semiconducting band gap and facilitates fast intra-chain charge transport. The as-prepared HP-FAN exhibits semiconducting features with calculated and experimental band gaps of approximately 1.44 and 1.54 eV, respectively, with an unusual flat band. The HP-FAN thin flakes, isolated by polydimethylsiloxane stamping, exhibit remarkable performance in a p-type field-effect transistor (FET) and a Hall effect device. Given its laterally extended ladder-type π-conjugated structure, the HP-FAN has extensive potential for applications in thin-film optoelectronic devices.

KW - charge carrier mobility

KW - fused aromatic network

KW - Hall effect

KW - SDG9: Industry, innovation, and infrastructure

KW - semiconducting

KW - two-dimensional

UR - http://www.scopus.com/inward/record.url?scp=85141233211&partnerID=8YFLogxK

U2 - 10.1016/j.chempr.2022.08.001

DO - 10.1016/j.chempr.2022.08.001

M3 - Article

AN - SCOPUS:85141233211

SN - 2451-9308

VL - 8

SP - 3130

EP - 3144

JO - Chem

JF - Chem

IS - 11

ER -

Hydrophenazine-linked two-dimensional ladder-type crystalline fused aromatic network with high charge transport

Abstract

Keywords

ASJC Scopus subject areas

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