Identification of refractory-metal-free C40 TiSi
                        2
                         for low temperature C54 TiSi
                        2
                         formation

Kun Li; S. Y. Chen; Z. X. Shen

doi:10.1063/1.1378309

Identification of refractory-metal-free C40 TiSi ₂ for low temperature C54 TiSi ₂ formation

Kun Li, S. Y. Chen, Z. X. Shen^*

^*Corresponding author for this work

Imaging & Characterization Core Lab

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A refractory-metal-free C40 TiSi ₂ phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi ₂ has a hexagonal structure with the space group P6 ₂ 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi ₂ can be directly achieved from C40 TiSi ₂ at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi ₂ into the subquarter micron region in semiconductor device fabrication.

Original language	English (US)
Pages (from-to)	3989-3991
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	25
DOIs	https://doi.org/10.1063/1.1378309
State	Published - Jun 18 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1378309

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@article{c7a3c8dee95a4206a7f8545b8f7fd006,

title = " Identification of refractory-metal-free C40 TiSi 2 for low temperature C54 TiSi 2 formation ",

abstract = " A refractory-metal-free C40 TiSi 2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi 2 has a hexagonal structure with the space group P6 2 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi 2 can be directly achieved from C40 TiSi 2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi 2 into the subquarter micron region in semiconductor device fabrication.",

author = "Kun Li and Chen, {S. Y.} and Shen, {Z. X.}",

year = "2001",

month = jun,

day = "18",

doi = "10.1063/1.1378309",

language = "English (US)",

volume = "78",

pages = "3989--3991",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "25",

}

Identification of refractory-metal-free C40 TiSi ₂ for low temperature C54 TiSi ₂ formation . / Li, Kun; Chen, S. Y.; Shen, Z. X.
In: Applied Physics Letters, Vol. 78, No. 25, 18.06.2001, p. 3989-3991.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Identification of refractory-metal-free C40 TiSi 2 for low temperature C54 TiSi 2 formation

AU - Li, Kun

AU - Chen, S. Y.

AU - Shen, Z. X.

PY - 2001/6/18

Y1 - 2001/6/18

N2 - A refractory-metal-free C40 TiSi 2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi 2 has a hexagonal structure with the space group P6 2 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi 2 can be directly achieved from C40 TiSi 2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi 2 into the subquarter micron region in semiconductor device fabrication.

AB - A refractory-metal-free C40 TiSi 2 phase formed by pulsed-laser annealing is identified experimentally by combined convergent beam electron diffraction (CBED) study and CBED pattern simulation. The simulation shows that the C40 TiSi 2 has a hexagonal structure with the space group P6 2 22(180) and lattice parameters a = 0.471 nm and c = 0.653 nm. Upon further furnace annealing or rapid thermal annealing, C54 TiSi 2 can be directly achieved from C40 TiSi 2 at low temperatures (600-700 °C). This observation suggests that pulsed-hiser annealing is promising for extension of TiSi 2 into the subquarter micron region in semiconductor device fabrication.

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U2 - 10.1063/1.1378309

DO - 10.1063/1.1378309

M3 - Article

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SN - 0003-6951

VL - 78

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EP - 3991

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Identification of refractory-metal-free C40 TiSi ₂ for low temperature C54 TiSi ₂ formation

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