TY - JOUR
T1 - Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX
3
Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors
AU - Xin, Bin
AU - Alaal, Naresh
AU - Mitra, Somak
AU - Subahi, Ahmad
AU - Pak, Yusin
AU - Almalawi, Dhaifallah
AU - Alwadai, Norah M.
AU - Lopatin, Sergei
AU - Roqan, Iman S.
N1 - KAUST Repository Item: Exported on 2020-10-05
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: This work was financially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1319-01-01). The authors thank the KAUST Medical Center (KMC) located at the KAUST campus for providing their X-ray facilities for carrying out the measurements.
PY - 2020/10/2
Y1 - 2020/10/2
N2 - High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3. The yellow-phase CsPbI3-based X-ray detector achieves a relatively high sensitivity of 83.6 μCGyair−1 cm−2 (under 1.7 mGyair s−1 at an electron field of 0.17 V μm−1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.
AB - High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3. The yellow-phase CsPbI3-based X-ray detector achieves a relatively high sensitivity of 83.6 μCGyair−1 cm−2 (under 1.7 mGyair s−1 at an electron field of 0.17 V μm−1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.
UR - http://hdl.handle.net/10754/665425
UR - https://onlinelibrary.wiley.com/doi/10.1002/smll.202004513
U2 - 10.1002/smll.202004513
DO - 10.1002/smll.202004513
M3 - Article
C2 - 33006244
SN - 1613-6810
SP - 2004513
JO - Small
JF - Small
ER -