TY - CHAP
T1 - III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors
AU - Detchprohm, T.
AU - Li, Xiaohang
AU - Shen, S.-C.
AU - Yoder, P.D.
AU - Dupuis, R.D.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The work at Georgia Institute of Technology was supported over several years in part by DARPA, NSF, and the US Army Research Office. We thank the School of ECE and the College of Engineering at Georgia Institute of Technology for additional support, and RDD acknowledges the continued support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.
PY - 2016/11/5
Y1 - 2016/11/5
N2 - The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
AB - The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
UR - http://hdl.handle.net/10754/622206
UR - http://www.sciencedirect.com/science/article/pii/S008087841630028X
UR - http://www.scopus.com/inward/record.url?scp=85006136204&partnerID=8YFLogxK
U2 - 10.1016/bs.semsem.2016.09.001
DO - 10.1016/bs.semsem.2016.09.001
M3 - Chapter
SN - 9780128095843
SP - 121
EP - 166
BT - Semiconductors and Semimetals
PB - Elsevier BV
ER -