III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Arnab Hazari; Anthony Aiello; Tien Khee Ng; Boon S. Ooi; Pallab Bhattacharya

doi:10.1063/1.4935614

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

Arnab Hazari, Anthony Aiello, Tien Khee Ng, Boon S. Ooi, Pallab Bhattacharya

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Abstract

III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

Original language	English (US)
Pages (from-to)	191107
Journal	Applied Physics Letters
Volume	107
Issue number	19
DOIs	https://doi.org/10.1063/1.4935614
State	Published - Nov 12 2015

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title = "III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon",

abstract = "III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.",

author = "Arnab Hazari and Anthony Aiello and Ng, {Tien Khee} and Ooi, {Boon S.} and Pallab Bhattacharya",

note = "KAUST Repository Item: Exported on 2020-10-01",

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language = "English (US)",

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T1 - III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

AU - Hazari, Arnab

AU - Aiello, Anthony

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Bhattacharya, Pallab

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/11/12

Y1 - 2015/11/12

N2 - III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

AB - III-nitride nanowirediodeheterostructures with multiple In0.85Ga0.15N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 1010 cm−2. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of Jth, T0, and dg/dn in these devices are 1.24 kA/cm2, 242 K, and 5.6 × 10−17 cm2, respectively. The peak emission is observed at ∼1.2 μm.

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SP - 191107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

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