Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Chun Wei Lee; Xiaochen Dong; Seok Hong Goh; Junling Wang; Jun Wei; Lain Jong Li

doi:10.1021/jp811006r

Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

Chun Wei Lee, Xiaochen Dong, Seok Hong Goh, Junling Wang, Jun Wei, Lain Jong Li

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO ₂ on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO ₂ interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO ₂surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO ₂ dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO ₂ interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO ₂ surfaces.

Original language	English (US)
Pages (from-to)	4745-4747
Number of pages	3
Journal	JOURNAL OF PHYSICAL CHEMISTRY C
Volume	113
Issue number	12
DOIs	https://doi.org/10.1021/jp811006r
State	Published - Mar 26 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp811006r

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title = "Illumination-enhanced hysteresis of transistors based on carbon nanotube networks",

abstract = "The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea{\~ } 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.",

author = "Lee, {Chun Wei} and Xiaochen Dong and Goh, {Seok Hong} and Junling Wang and Jun Wei and Li, {Lain Jong}",

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T1 - Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

AU - Lee, Chun Wei

AU - Dong, Xiaochen

AU - Goh, Seok Hong

AU - Wang, Junling

AU - Wei, Jun

AU - Li, Lain Jong

PY - 2009/3/26

Y1 - 2009/3/26

N2 - The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.

AB - The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy Ea ̃ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.

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Illumination-enhanced hysteresis of transistors based on carbon nanotube networks

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