Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

Riya Bose; Aniruddha Adhikari; Victor M. Burlakov; Guangyu Liu; Md Azimul Haque; Davide Priante; Mohamed N. Hedhili; Nimer Wehbe; Chao Zhao; Haoze Yang; Tien Khee Ng; Alain Goriely; Osman M. Bakr; Tom Wu; Boon S. Ooi; Omar F. Mohammed

doi:10.1021/acsenergylett.7b01330

Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

Riya Bose, Aniruddha Adhikari, Victor M. Burlakov, Guangyu Liu, Md Azimul Haque, Davide Priante, Mohamed N. Hedhili, Nimer Wehbe, Chao Zhao, Haoze Yang, Tien Khee Ng, Alain Goriely, Osman M. Bakr, Tom Wu, Boon S. Ooi, Omar F. Mohammed^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regimes of surface dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 ps) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer time scale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in the dark and under illumination.

Original language	English (US)
Pages (from-to)	476-481
Number of pages	6
Journal	ACS Energy Letters
Volume	3
Issue number	2
DOIs	https://doi.org/10.1021/acsenergylett.7b01330
State	Published - Feb 9 2018

ASJC Scopus subject areas

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

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10.1021/acsenergylett.7b01330

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Bose, R., Adhikari, A., Burlakov, V. M., Liu, G., Haque, M. A., Priante, D., Hedhili, M. N., Wehbe, N., Zhao, C., Yang, H., Ng, T. K., Goriely, A., Bakr, O. M., Wu, T., Ooi, B. S., & Mohammed, O. F. (2018). Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy. ACS Energy Letters, 3(2), 476-481. https://doi.org/10.1021/acsenergylett.7b01330

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title = "Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy",

abstract = "Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regimes of surface dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 ps) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer time scale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in the dark and under illumination.",

author = "Riya Bose and Aniruddha Adhikari and Burlakov, {Victor M.} and Guangyu Liu and Haque, {Md Azimul} and Davide Priante and Hedhili, {Mohamed N.} and Nimer Wehbe and Chao Zhao and Haoze Yang and Ng, {Tien Khee} and Alain Goriely and Bakr, {Osman M.} and Tom Wu and Ooi, {Boon S.} and Mohammed, {Omar F.}",

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doi = "10.1021/acsenergylett.7b01330",

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AU - Bose, Riya

AU - Adhikari, Aniruddha

AU - Burlakov, Victor M.

AU - Liu, Guangyu

AU - Haque, Md Azimul

AU - Priante, Davide

AU - Hedhili, Mohamed N.

AU - Wehbe, Nimer

AU - Zhao, Chao

AU - Yang, Haoze

AU - Ng, Tien Khee

AU - Goriely, Alain

AU - Bakr, Osman M.

AU - Wu, Tom

AU - Ooi, Boon S.

AU - Mohammed, Omar F.

PY - 2018/2/9

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N2 - Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regimes of surface dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 ps) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer time scale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in the dark and under illumination.

AB - Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regimes of surface dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 ps) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer time scale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in the dark and under illumination.

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Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy

Abstract

ASJC Scopus subject areas

UN SDGs

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