Imaging of field-effect transistors by focused terahertz radiation

D. B. Veksler, A. V. Muravjov, V. Yu Kachorovskii*, T. A. Elkhatib, Khaled Nabil Salama, X. C. Zhang, M. S. Shur

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


We study the response of a field-effect transistor to focused terahertz radiation. The radiation-induced plasma oscillations are rectified due to nonlinear properties of the transistor channel, thus leading to change of source-to-drain voltage δ V. We demonstrate that δ V dramatically depends both on the precise focus position of the incoming beam and on the current in the channel. The observed voltage response contains contributions of different signs that we attribute to radiation induced signals between source-and-gate and gate-and-drain electrodes of the device.

Original languageEnglish (US)
Pages (from-to)571-573
Number of pages3
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 1 2009


  • Field-effect transistors
  • Imaging
  • Plasma wave electronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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