Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Xinbo Yang; D. Macdonald; A. Fell; A. Shalav; Lujia Xu; D. Walter; T. Ratcliff; E. Franklin; K. Weber; R. Elliman

doi:10.1063/1.4817525

Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Xinbo Yang^*, D. Macdonald, A. Fell, A. Shalav, Lujia Xu, D. Walter, T. Ratcliff, E. Franklin, K. Weber, R. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We present an approach to characterize the relative saturation current density (J_oe) and sheet resistance (R_SH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the R_SH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (I_PL). We explain the underlying mechanism for this correlation, which reveals that, in principle, I_PL is inversely proportional to J_oe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low R_SH and J_oe to be determined from a simple PL image.

Original language	English (US)
Article number	053107
Journal	Journal of Applied Physics
Volume	114
Issue number	5
DOIs	https://doi.org/10.1063/1.4817525
State	Published - Aug 7 2013
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4817525

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@article{e5b0e4dcef5f4962b27090424bb2977b,

title = "Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence",

abstract = "We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.",

author = "Xinbo Yang and D. Macdonald and A. Fell and A. Shalav and Lujia Xu and D. Walter and T. Ratcliff and E. Franklin and K. Weber and R. Elliman",

note = "Funding Information: The authors acknowledge financial support from the Australian Solar Institute (ASI)/Australian Renewable Energy Agency (ARENA) under the ANU PV Core project, Postdoctoral Fellowship and Australia-Germany Collaborative Solar Research and Development projects. The authors also acknowledge support from the Australian Government's NCRIS/EIF funding programs for access to Heavy Ion Accelerator Facilities at the Australian National University. They thank Professor A. Cuevas for valuable discussions.",

year = "2013",

month = aug,

day = "7",

doi = "10.1063/1.4817525",

language = "English (US)",

volume = "114",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "5",

}

TY - JOUR

T1 - Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

AU - Yang, Xinbo

AU - Macdonald, D.

AU - Fell, A.

AU - Shalav, A.

AU - Xu, Lujia

AU - Walter, D.

AU - Ratcliff, T.

AU - Franklin, E.

AU - Weber, K.

AU - Elliman, R.

N1 - Funding Information: The authors acknowledge financial support from the Australian Solar Institute (ASI)/Australian Renewable Energy Agency (ARENA) under the ANU PV Core project, Postdoctoral Fellowship and Australia-Germany Collaborative Solar Research and Development projects. The authors also acknowledge support from the Australian Government's NCRIS/EIF funding programs for access to Heavy Ion Accelerator Facilities at the Australian National University. They thank Professor A. Cuevas for valuable discussions.

PY - 2013/8/7

Y1 - 2013/8/7

N2 - We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

AB - We present an approach to characterize the relative saturation current density (Joe) and sheet resistance (RSH) of laser doped regions on silicon wafers based on rapid photoluminescence (PL) imaging. In the absence of surface passivation layers, the RSH of laser doped regions using a wide range of laser parameters is found to be inversely proportional to the PL intensity (IPL). We explain the underlying mechanism for this correlation, which reveals that, in principle, IPL is inversely proportional to Joe at any injection level. The validity of this relationship under a wide range of typical experimental conditions is confirmed by numerical simulations. This method allows the optimal laser parameters for achieving low RSH and Joe to be determined from a simple PL image.

UR - http://www.scopus.com/inward/record.url?scp=84882269891&partnerID=8YFLogxK

U2 - 10.1063/1.4817525

DO - 10.1063/1.4817525

M3 - Article

AN - SCOPUS:84882269891

SN - 0021-8979

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053107

ER -

Imaging of the relative saturation current density and sheet resistance of laser doped regions via photoluminescence

Abstract

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