Abstract
Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.
Original language | English (US) |
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Pages (from-to) | H313 |
Journal | Electrochemical and Solid-State Letters |
Volume | 13 |
Issue number | 9 |
DOIs | |
State | Published - Jul 12 2010 |
ASJC Scopus subject areas
- General Materials Science
- General Chemical Engineering
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering