Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Wejdan S. Alghamdi, Aiman Fakieh, Hendrik Faber, Yen Hung Lin, Wei Zhi Lin, Po Yu Lu, Chien Hao Liu, Khaled Nabil Salama, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments.

Original languageEnglish (US)
Article number233503
JournalApplied Physics Letters
Volume121
Issue number23
DOIs
StatePublished - Dec 5 2022

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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