@inproceedings{80a329b5ecbd4b4391f4c2c564c66d84,
title = "Impact of metal wet etch on device characteristics and reliability for dual metal gate/high-k CMOS",
abstract = "This paper presents a comparative study of the impact of metal wet etch on carrier mobility and metal gate/high-k device characteristics and reliability. A TaSiN metal wet etch process that is highly selective to the underlying HfO2 dielectric has been developed. While the metal wet etch slightly degraded the electron mobility, it did not affect hole mobility. It did not show any effect on fast transient charge trapping, and, in fact, improved negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI).",
keywords = "Carrier mobility, Dual metal gate CMOS, Gate dielectric reliability, High-k, Metal wet etch",
author = "Zhibo Zhang and Hussain, {Muhammad Mustafa} and Bae, {Sang Ho} and Song, {S. C.} and Lee, {Byoung Hun}",
year = "2006",
doi = "10.1109/RELPHY.2006.251250",
language = "English (US)",
isbn = "0780394992",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "388--391",
booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",
note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",
}