Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs

Q. Wu; M. Porti; A. Bayerl; M. Lanza; J. Martin-Martinez; R. Rodriguez; M. Nafria; X. Aymerich; E. Simoen

doi:10.1109/CDE.2015.7087505

Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs

Q. Wu, M. Porti, A. Bayerl, M. Lanza, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.

Original language	English (US)
Title of host publication	Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479981083
DOIs	https://doi.org/10.1109/CDE.2015.7087505
State	Published - Jan 1 2015
Externally published	Yes

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10.1109/CDE.2015.7087505

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Wu, Q., Porti, M., Bayerl, A., Lanza, M., Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., & Simoen, E. (2015). Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs. In Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CDE.2015.7087505

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title = "Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs",

abstract = "In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.",

author = "Q. Wu and M. Porti and A. Bayerl and M. Lanza and J. Martin-Martinez and R. Rodriguez and M. Nafria and X. Aymerich and E. Simoen",

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year = "2015",

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doi = "10.1109/CDE.2015.7087505",

language = "English (US)",

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Wu, Q, Porti, M, Bayerl, A, Lanza, M, Martin-Martinez, J, Rodriguez, R, Nafria, M, Aymerich, X & Simoen, E 2015, Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs. in Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/CDE.2015.7087505

Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs. / Wu, Q.; Porti, M.; Bayerl, A. et al.
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015. Institute of Electrical and Electronics Engineers Inc., 2015.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs

AU - Wu, Q.

AU - Porti, M.

AU - Bayerl, A.

AU - Lanza, M.

AU - Martin-Martinez, J.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Aymerich, X.

AU - Simoen, E.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2015/1/1

Y1 - 2015/1/1

N2 - In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.

AB - In this work, the impact of Negative Bias Temperature Instability (NBTI) and Channel Hot Carrier (CHC) stresses on different regions along the channel of the MOSFET gate dielectric is analyzed at the nanoscale with Conductive Atomic Force Microscope (CAFM). In particular, it is demonstrated that, while the BTI degradation is homogeneous, the CHC stress degradation is higher close to source (S) and drain (D). When comparing strained and non-strained channel devices, the results show that strained devices are more sensitive to CHC stress.

UR - http://ieeexplore.ieee.org/document/7087505/

UR - http://www.scopus.com/inward/record.url?scp=84929359305&partnerID=8YFLogxK

U2 - 10.1109/CDE.2015.7087505

DO - 10.1109/CDE.2015.7087505

M3 - Conference contribution

SN - 9781479981083

BT - Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs

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