Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers

Nor Azlian Abdul Manaf; Mohd Sharizal Alias; Sufian Mousa Mitani; Farha Maskuriy; Idris Sabtu; Mohd Razman Yahya

doi:10.1063/1.3587014

Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers

Nor Azlian Abdul Manaf^*, Mohd Sharizal Alias, Sufian Mousa Mitani, Farha Maskuriy, Idris Sabtu, Mohd Razman Yahya

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A comprehensive study has been done to investigate the lasing characteristic of 1.31 μm GaInNAs quantum well (QW) lasers. We have varied the nitrogen (N) compositions of GaInNAs QW from 1.0 to 2.0 percentages (%) with a stepped of 0.2 %. Significant improvement of lasing wavelength, emission efficiency and output power were demonstrated with higher N in GaInNAs QW. The emission wavelength red-shifted when the N% enlarge. As formerly known, the band gap of GaInNAs is controlled by adjusting the ratio of group III (Ga, In) or group V (N, As) materials. As the N increased, the band gap will be reduced and thus increasing the emission wavelength. The average ratio of the red-shifted is 92.49 nm per N %. We believed that that the optical quality of the GaInNAs QW depends on N% and total number of N incorporated in the QW. The discussion on the devices performance will be reported further.

Original language	English (US)
Title of host publication	Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
Pages	335-338
Number of pages	4
Volume	1341
DOIs	https://doi.org/10.1063/1.3587014
State	Published - 2011
Externally published	Yes
Event	2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010 - Kuala Lumpur, Malaysia Duration: Dec 1 2010 → Dec 3 2010

Other

Other	2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010
Country/Territory	Malaysia
City	Kuala Lumpur
Period	12/1/10 → 12/3/10

Keywords

1.31 μm lasing wavelength
GaInNAs Quantum Well
nitrogen compositions

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3587014

Cite this

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title = "Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers",

abstract = "A comprehensive study has been done to investigate the lasing characteristic of 1.31 μm GaInNAs quantum well (QW) lasers. We have varied the nitrogen (N) compositions of GaInNAs QW from 1.0 to 2.0 percentages (%) with a stepped of 0.2 %. Significant improvement of lasing wavelength, emission efficiency and output power were demonstrated with higher N in GaInNAs QW. The emission wavelength red-shifted when the N% enlarge. As formerly known, the band gap of GaInNAs is controlled by adjusting the ratio of group III (Ga, In) or group V (N, As) materials. As the N increased, the band gap will be reduced and thus increasing the emission wavelength. The average ratio of the red-shifted is 92.49 nm per N %. We believed that that the optical quality of the GaInNAs QW depends on N% and total number of N incorporated in the QW. The discussion on the devices performance will be reported further.",

keywords = "1.31 μm lasing wavelength, GaInNAs Quantum Well, nitrogen compositions",

author = "Manaf, {Nor Azlian Abdul} and Alias, {Mohd Sharizal} and Mitani, {Sufian Mousa} and Farha Maskuriy and Idris Sabtu and Yahya, {Mohd Razman}",

year = "2011",

doi = "10.1063/1.3587014",

language = "English (US)",

isbn = "9780735408975",

volume = "1341",

pages = "335--338",

booktitle = "Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010",

note = "2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010 ; Conference date: 01-12-2010 Through 03-12-2010",

}

Manaf, NAA, Alias, MS, Mitani, SM, Maskuriy, F, Sabtu, I & Yahya, MR 2011, Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers. in Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. vol. 1341, pp. 335-338, 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010, Kuala Lumpur, Malaysia, 12/1/10. https://doi.org/10.1063/1.3587014

Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers. / Manaf, Nor Azlian Abdul; Alias, Mohd Sharizal; Mitani, Sufian Mousa et al.
Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010. Vol. 1341 2011. p. 335-338.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers

AU - Manaf, Nor Azlian Abdul

AU - Alias, Mohd Sharizal

AU - Mitani, Sufian Mousa

AU - Maskuriy, Farha

AU - Sabtu, Idris

AU - Yahya, Mohd Razman

PY - 2011

Y1 - 2011

N2 - A comprehensive study has been done to investigate the lasing characteristic of 1.31 μm GaInNAs quantum well (QW) lasers. We have varied the nitrogen (N) compositions of GaInNAs QW from 1.0 to 2.0 percentages (%) with a stepped of 0.2 %. Significant improvement of lasing wavelength, emission efficiency and output power were demonstrated with higher N in GaInNAs QW. The emission wavelength red-shifted when the N% enlarge. As formerly known, the band gap of GaInNAs is controlled by adjusting the ratio of group III (Ga, In) or group V (N, As) materials. As the N increased, the band gap will be reduced and thus increasing the emission wavelength. The average ratio of the red-shifted is 92.49 nm per N %. We believed that that the optical quality of the GaInNAs QW depends on N% and total number of N incorporated in the QW. The discussion on the devices performance will be reported further.

AB - A comprehensive study has been done to investigate the lasing characteristic of 1.31 μm GaInNAs quantum well (QW) lasers. We have varied the nitrogen (N) compositions of GaInNAs QW from 1.0 to 2.0 percentages (%) with a stepped of 0.2 %. Significant improvement of lasing wavelength, emission efficiency and output power were demonstrated with higher N in GaInNAs QW. The emission wavelength red-shifted when the N% enlarge. As formerly known, the band gap of GaInNAs is controlled by adjusting the ratio of group III (Ga, In) or group V (N, As) materials. As the N increased, the band gap will be reduced and thus increasing the emission wavelength. The average ratio of the red-shifted is 92.49 nm per N %. We believed that that the optical quality of the GaInNAs QW depends on N% and total number of N incorporated in the QW. The discussion on the devices performance will be reported further.

KW - 1.31 μm lasing wavelength

KW - GaInNAs Quantum Well

KW - nitrogen compositions

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DO - 10.1063/1.3587014

M3 - Conference contribution

AN - SCOPUS:80655143550

SN - 9780735408975

VL - 1341

SP - 335

EP - 338

BT - Enabling Science and Nanotechnology - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010

T2 - 2010 International Conference on Enabling Science and Nanotechnology, EsciNano2010

Y2 - 1 December 2010 through 3 December 2010

ER -

Impact of nitrogen on the lasing characteristic of 1.31 μm GaInNAs quantum well lasers

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