Abstract
The impact of quantum well intermixing on polarization anisotropy in InGaAs/InGaAsP quantum well modulators was discussed. The interdiffusion process to investigate the consequence of different interdiffusion ratios between the group III and group V sublattices on the polarization behavior of these modulators was also presented. It was found out that the numerical modeling agreed with the experimental results, indicating the degree of intermixing on the group V sublattices which was more significant compared to the group III sublattices.
Original language | English (US) |
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Pages (from-to) | 1482-1486 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 4 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering