Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition

Zhuopeng Wu, Liping Zhang*, Renfang Chen, Wenzhu Liu, Zhenfei Li, Fanying Meng, Zhengxin Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Intrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense a-Si:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 μm, 156 × 156 mm 2 ) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high V oc values of 741 mV.

Original languageEnglish (US)
Pages (from-to)504-509
Number of pages6
JournalApplied Surface Science
Volume475
DOIs
StatePublished - May 1 2019

Keywords

  • Amorphous/crystalline silicon heterojunction solar cells
  • Hot wire chemical vapor deposition
  • Hydrogenated amorphous silicon
  • Surface passivation

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • General Physics and Astronomy
  • Surfaces and Interfaces

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