Improved GaNxAs1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

S. Z. Wang; S. F. Yoon; W. K. Loke; T. K. Ng; W. J. Fan

doi:10.1116/1.1490391

Improved GaN_xAs_1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

S. Z. Wang^*, S. F. Yoon, W. K. Loke, T. K. Ng, W. J. Fan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

A modified growth technique that uses dispersive nitrogen from a rf activated plasma nitrogen source in conjunction with SSMBE for the growth of the GaAsN layers on GaAs substrate was demonstrated. When interrupted by a shutter, the direct nitrogen beam from the plasma source minimized the bombardment effect of energetic nitrogen ions on the growth surface. XRD and PL results indicate that in terms of luminescence, crystalline, and interface quality, high-quality GaAsN epilayers can be achieved using this growth mode. Preliminary comparison of light microscopy pictures suggests that the surface of the GaAsN sample grown using the dispersive nitrogen source has fewer defects compared to that of the sample grown using the direct nitrogen beam.

Original language	English (US)
Pages (from-to)	1364-1367
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1490391
State	Published - Jul 2002
Externally published	Yes
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1490391

Cite this

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title = "Improved GaNxAs1-x quality grown by molecular beam epitaxy with dispersive nitrogen source",

abstract = "A modified growth technique that uses dispersive nitrogen from a rf activated plasma nitrogen source in conjunction with SSMBE for the growth of the GaAsN layers on GaAs substrate was demonstrated. When interrupted by a shutter, the direct nitrogen beam from the plasma source minimized the bombardment effect of energetic nitrogen ions on the growth surface. XRD and PL results indicate that in terms of luminescence, crystalline, and interface quality, high-quality GaAsN epilayers can be achieved using this growth mode. Preliminary comparison of light microscopy pictures suggests that the surface of the GaAsN sample grown using the dispersive nitrogen source has fewer defects compared to that of the sample grown using the direct nitrogen beam.",

author = "Wang, {S. Z.} and Yoon, {S. F.} and Loke, {W. K.} and Ng, {T. K.} and Fan, {W. J.}",

year = "2002",

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issn = "1071-1023",

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note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

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T1 - Improved GaNxAs1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

AU - Wang, S. Z.

AU - Yoon, S. F.

AU - Loke, W. K.

AU - Ng, T. K.

AU - Fan, W. J.

PY - 2002/7

Y1 - 2002/7

N2 - A modified growth technique that uses dispersive nitrogen from a rf activated plasma nitrogen source in conjunction with SSMBE for the growth of the GaAsN layers on GaAs substrate was demonstrated. When interrupted by a shutter, the direct nitrogen beam from the plasma source minimized the bombardment effect of energetic nitrogen ions on the growth surface. XRD and PL results indicate that in terms of luminescence, crystalline, and interface quality, high-quality GaAsN epilayers can be achieved using this growth mode. Preliminary comparison of light microscopy pictures suggests that the surface of the GaAsN sample grown using the dispersive nitrogen source has fewer defects compared to that of the sample grown using the direct nitrogen beam.

AB - A modified growth technique that uses dispersive nitrogen from a rf activated plasma nitrogen source in conjunction with SSMBE for the growth of the GaAsN layers on GaAs substrate was demonstrated. When interrupted by a shutter, the direct nitrogen beam from the plasma source minimized the bombardment effect of energetic nitrogen ions on the growth surface. XRD and PL results indicate that in terms of luminescence, crystalline, and interface quality, high-quality GaAsN epilayers can be achieved using this growth mode. Preliminary comparison of light microscopy pictures suggests that the surface of the GaAsN sample grown using the dispersive nitrogen source has fewer defects compared to that of the sample grown using the direct nitrogen beam.

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

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Improved GaN_xAs_1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

Abstract

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