Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Muhammad Shafa; S. Assa Aravindh; Mohamed N. Hedhili; Saleh T. Mahmoud; Yi Pan; Tien Khee Ng; Boon S. Ooi; Adel Najar

doi:10.1016/j.ijhydene.2020.10.275

Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Muhammad Shafa, S. Assa Aravindh, Mohamed N. Hedhili, Saleh T. Mahmoud, Yi Pan, Tien Khee Ng, Boon S. Ooi, Adel Najar

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.

Original language	English (US)
Journal	International Journal of Hydrogen Energy
DOIs	https://doi.org/10.1016/j.ijhydene.2020.10.275
State	Published - Dec 2020

Access to Document

10.1016/j.ijhydene.2020.10.275

https://repository.kaust.edu.sa/bitstream/10754/666672/1/Revised%20Manuscript_Clean%20%281%29.pdf

Cite this

@article{49a89393d9ff4b069af9e49d1edbf919,

title = "Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching",

abstract = "High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.",

author = "Muhammad Shafa and Aravindh, {S. Assa} and Hedhili, {Mohamed N.} and Mahmoud, {Saleh T.} and Yi Pan and Ng, {Tien Khee} and Ooi, {Boon S.} and Adel Najar",

note = "KAUST Repository Item: Exported on 2020-12-28 Acknowledgements: This work was supported by Projects No. UPAR 31S443 & 31S214 from UAE University. M. Shafa and Y. Pan acknowledge the National Key R&D Program of China (2017YFA0206202), National Science Foundation of China (11704303) and China Postdoctoral Science Foundation Grant (2019M663691). S. Assa Aravindh gratefully acknowledges CSC – IT Center for Science, Finland for computational resources and Academy of Finland (#311934) for funding.",

year = "2020",

month = dec,

doi = "10.1016/j.ijhydene.2020.10.275",

language = "English (US)",

journal = "International Journal of Hydrogen Energy",

issn = "0360-3199",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

AU - Shafa, Muhammad

AU - Aravindh, S. Assa

AU - Hedhili, Mohamed N.

AU - Mahmoud, Saleh T.

AU - Pan, Yi

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Najar, Adel

N1 - KAUST Repository Item: Exported on 2020-12-28 Acknowledgements: This work was supported by Projects No. UPAR 31S443 & 31S214 from UAE University. M. Shafa and Y. Pan acknowledge the National Key R&D Program of China (2017YFA0206202), National Science Foundation of China (11704303) and China Postdoctoral Science Foundation Grant (2019M663691). S. Assa Aravindh gratefully acknowledges CSC – IT Center for Science, Finland for computational resources and Academy of Finland (#311934) for funding.

PY - 2020/12

Y1 - 2020/12

N2 - High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.

AB - High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H2 down to 30 ppm at 23 °C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals.

UR - http://hdl.handle.net/10754/666672

UR - https://linkinghub.elsevier.com/retrieve/pii/S0360319920344736

UR - http://www.scopus.com/inward/record.url?scp=85097876037&partnerID=8YFLogxK

U2 - 10.1016/j.ijhydene.2020.10.275

DO - 10.1016/j.ijhydene.2020.10.275

M3 - Article

SN - 0360-3199

JO - International Journal of Hydrogen Energy

JF - International Journal of Hydrogen Energy

ER -

Improved H2 detection performance of GaN sensor with Pt/Sulfide treatment of porous active layer prepared by metal electroless etching

Abstract

Access to Document

Other files and links

Fingerprint

Cite this